2SK715 no.2543-1/7 applications ? am tuner rf amp, low-noise amp ? hf low-noise amp features ? adoption of fbet process ? large ? yfs ? ? small ciss ? very low noise gure speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 15 v gate-to-drain voltage v gds --15 v gate current i g 10 ma drain current i d 50 ma allowable power dissipation p d 300 mw junction temperature tj 125 c storage temperature tstg --55 to +125 c package dimensions unit : mm (typ) 7524-005 n1412 tkim/42899th (kt)/4237ta, ts sanyo semiconductors data sheet 2SK715 http://www.sanyosemi.com/en/network/ ordering number : en2543a product & package information ? package : spa ? jeita, jedec : sc-72 ? minimum packing quantity : 2,500 pcs./box marking electrical connection n-channel junction silicon fet am tuner, rf ampli er applications 123 4.0 3.8 3.0 2.2 0.7 0.7 0.6 0.4 0.4 0.4 0.5 3.0 1.8 15.0 1.3 1.3 1 : source 2 : gate 3 : drain sanyo : spa 2SK715u-ac 2SK715v-ac k715 lot no. rank 1 3 2
2SK715 no.2543-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max gate-to-drain breakdown voltage v (br)gds i g =--10 a, v ds =0v --15 v gate-to-source leakage current i gss v gs =--10v, v ds =0v --1.0 na zero-gate voltage drain current i dss *v ds =5v, v gs =0v 5.0* 24.0* ma cutoff voltage v gs (off) v ds =5v, i d =100 a --0.6 --1.4 v forward transfer admittance | yfs | v ds =5v, v gs =0v, f=1khz 25 50 ms input capacitance ciss 10 pf reverse transfer capacitance crss 3.0 pf noise figure nf v ds =5v, r g =1k , i d =1ma, f=1khz 1.5 db * : the 2SK715 is classi ed by i dss as follows : (unit : ma) rank t u v w i dss 5.0 to 8.5 7.3 to 12.0 10.0 to 17.0 14.5 to 24.0 ordering information device package shipping memo 2SK715u-ac spa 2,500pcs./box pb free 2SK715v-ac spa 2,500pcs./box gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a drain current, i dss -- ma cutoff voltage, v gs (off) -- v v gs (off) -- i dss drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- ma gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- ma itr00869 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 v gs =0 --0.1v --0.2v --0.3v --0.4v --0.5v v gs =0 --0.1v --0.2v --0.3v --0.4v --0.5v --0.6v itr00871 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0 10 20 30 40 itr00870 0246 810 0 4 8 12 16 57 2 3 35 10 7 --1.0 --0.1 5 3 2 2 v ds =5v i d =100 a itr00872 v ds =5v i dss =20ma 10ma 5ma
2SK715 no.2543-3/7 ambient temperature, ta -- c allowable power dissipation, p d -- mw p d -- ta frequency, f -- hz nf -- f noise figure, nf -- db frequency, f -- hz nf -- f noise figure, nf -- db drain current, i dss -- ma forward transfer admittance, | y fs | -- ms | y fs | -- i dss drain current, i d -- ma forward transfer admittance, | y fs | -- ms | y fs | -- i d ciss -- v ds drain-to-source voltage, v ds -- v input capacitance, ciss -- pf crss -- v ds drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf 0 20 40 60 80 100 120 140 0 150 100 50 200 300 250 350 i d =1ma 3ma itr00879 10 100 1k 5 1m 25 225 10k 25 100k 22 5 10 100 1k 5 1m 25 225 10k 25 100k 22 5 0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14 v ds =5v rg=1k v gs =5v i d =10ma rg=500 1k 10k itr00877 itr00878 10ma i dss =5ma 20ma 10ma itr00873 itr00874 v ds =5v f=1khz 1.0 5 3 2 77 75 3 2 10 5 3 2 2 10 7 100 7 5 v ds =5v v gs =0 f=1khz 5 3 32 7 5 10 5 3 2 100 10 7 itr00875 itr00876 v gs =0 f=1mhz 1.0 23 3 57 7 10 2 2 2 7 5 3 3 10 1.0 23 57 7 10 23 1.0 2 2 7 5 3 10 v gs =0 f=1mhz
2SK715 no.2543-4/7 taping speci cation 2SK715u-ac, 2SK715v-ac
2SK715 no.2543-5/7
2SK715 no.2543-6/7 outline drawing 2SK715u-ac, 2SK715v-ac mass (g) unit 0.13 * for reference mm
2SK715 ps no.2543-7/7 this catalog provides information as of november, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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